PART |
Description |
Maker |
RJK1054DPB-00-J5 |
100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 |
100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching 100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
FME-220A |
Schottky Barrier Diode - 90V/100V 100V, 20A Schottky barrier diode in TO220F package 100V/ 20A Schottky barrier diode in TO220F package 100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric] Sanken Electric Co., Ltd.
|
RJK0851DPB-00-J5 RJK0851DPB-13 |
80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
HUF76629D3 HUF76629D3S HUF76629D3STNL |
20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 20A,100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
S20C90 S20C100 S20C70 S20C80 |
SCHOTTKY BARRIER RECTIFIERS(20A/70-100V) SCHOTTKY BARRIER RECTIFIERS(20A,70-100V)
|
MOSPEC[Mospec Semiconductor]
|
RJK1051DPB-00-J5 RJK1051DPB-15 |
100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching 100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
SGC201BS-15 |
Surface Mount Schottky Rectifier Reverse Voltage 100V Forward Current 20A
|
GOOD-ARK Electronics
|
SBR200-10JS |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier
|
Sanyo Semicon Device
|
SBR200-10G |
Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier
|
Sanyo Semicon Device
|
NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT |
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A. Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A. Silicon Power Rectifier Diode 6 Amp Silicon Power Rectifier Diode, 6 Amp Silicon Power Rectifier Diode / 6 Amp Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A. Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
|
NTE[NTE Electronics]
|
BYW51-200 |
8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
|
ON Semiconductor
|