Part Number Hot Search : 
LXM16 BB153 CSC1213 1LT1G T113004 BB83307 PH2503 STBP047
Product Description
Full Text Search

RJK1054DPB-00-J5 - 100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching

RJK1054DPB-00-J5_8208935.PDF Datasheet


 Full text search : 100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching


 Related Part Number
PART Description Maker
RJK1054DPB-00-J5 100V, 20A, 22m max Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
RJK1052DPB-13 RJK1052DPB-00-J5 RJK1052DPB-15 100V, 20A, 20m max. Silicon N Channel Power MOS FET Power Switching
100V, 20A, 20m?max. Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
FME-220A Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
RJK0851DPB-00-J5 RJK0851DPB-13 80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
HUF76629D3 HUF76629D3S HUF76629D3STNL 20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFETPower MOSFET
20A,100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
20A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
FAIRCHILD[Fairchild Semiconductor]
S20C90 S20C100 S20C70 S20C80 SCHOTTKY BARRIER RECTIFIERS(20A/70-100V)
SCHOTTKY BARRIER RECTIFIERS(20A,70-100V)
MOSPEC[Mospec Semiconductor]
RJK1051DPB-00-J5 RJK1051DPB-15 100V, 15A, 39m max. Silicon N Channel Power MOS FET Power Switching
100V, 15A, 39m?max Silicon N Channel Power MOS FET Power Switching
Renesas Electronics Corporation
SGC201BS-15 Surface Mount Schottky Rectifier Reverse Voltage 100V Forward Current 20A
GOOD-ARK Electronics
SBR200-10JS Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier
Sanyo Semicon Device
SBR200-10G Schottky Barrier Diode (Twin Type 隆陇 Cathode Common) 100V, 20A Rectifier
Schottky Barrier Diode (Twin Type ・ Cathode Common) 100V, 20A Rectifier
Sanyo Semicon Device
NTE5869 NTE5850 NTE5866 NTE5861 NTE5863 NTE5862 NT Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 1000V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 600V. Average forward current 6A.
Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 500V. Average forward current 6A.
Silicon Power Rectifier Diode 6 Amp
Silicon Power Rectifier Diode, 6 Amp
Silicon Power Rectifier Diode / 6 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.
NTE[NTE Electronics]
BYW51-200 8A, 100V - 200V Ultrafast Dual Diodes(8A, 100V - 200V 超快速二极管) 8 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
ON Semiconductor
 
 Related keyword From Full Text Search System
RJK1054DPB-00-J5 Integrated RJK1054DPB-00-J5 siemens RJK1054DPB-00-J5 eeprom pdf RJK1054DPB-00-J5 Reset RJK1054DPB-00-J5 Ic on line
RJK1054DPB-00-J5 Address RJK1054DPB-00-J5 filetype:pdf RJK1054DPB-00-J5 table RJK1054DPB-00-J5 converter RJK1054DPB-00-J5 display
 

 

Price & Availability of RJK1054DPB-00-J5

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.42456197738647